Rising demand for improving connectivity to streamline businesses and living conditions are fueling InGaAs hardware demand to develop dynamic connectivity solutions
Rising demand for improving connectivity to streamline businesses and living conditions are fueling InGaAs hardware demand to develop dynamic connectivity solutions
Fact.MR, Dubai: Award winning market research company Fact.MR has published a detailed report on the global indium gallium arsenide (InGaAs) market. As per its forecast, the market has been experiencing a gradual incline since Q4 2020, as easing of lockdowns have permitted a resumption of manufacturing activities. Short-term growth for FY 2021-22 is expected to remain modest, after which it is likely to accelerate at a strong CAGR exceeding 8% until 2031.
Prolific investments with respect to boosting communications infrastructure are anticipated to buoy the market, with attractive prospects across 5G infrastructure deployment. While it has been a buzzword across the historical period, 5G availability has reached an inflexion point, with key geographies already deploying the necessary apparatus. According to GSMA, 5G networks are likely to cover 33% of the global population by 2025.
Furthermore, burgeoning investments in smart cities development is likely to open a gateway of opportunities for the InGaAs market. Smart cities are expected to primarily rely on 5G infrastructure, thus fueling intensive research and development initiatives on the methods of incorporating numerous technological breakthroughs. For instance, the Government of India has initiated the Smart Cities Mission, expected to benefit nearly 1 billion people by 2023, which is likely to boost InGaAs adoption in development the needed infrastructure.
“Rapid digitization and smart technology penetration is facilitating heightened deployment of advanced transmission infrastructure, largely aimed at enhancing internet and telecommunications connectivity, prompting service provides to launch high-end solutions,” comments the Fact.MR analyst.
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Key Takeaways from Fact.MR’s InGaAs Market Study
- By type, avalanche InGaAs photodiodes are likely to account for over a third of the market share
- Metal-based InGaAs photodiodes to remain prominent, attributed to excellent thermal conductivity properties
- Demand to remain strong across the consumer electronics segment, communication systems to account for a significant share
- U.S to pivot market growth, driven by rising investments in 5G infrastructure development
- Germany to witness high InGaAs photodiodes adoption across the automotive industry
- Emerging markets such as China, India and Brazil to be most attractive growth hotspots
InGaAs Market- Prominent Drivers
- Advancements in production technologies such as laser printing and additive manufacturing to fuel InGaAs market growth
- InGaAs adoption broadening amid rising international research coalitions amongst academic institutions to facilitate novel technology integration
- Intensive infrastructure development to promote 5G connectivity to bolster InGaAs photodiodes adoption
InGaAs Market- Key Restraints
- Heavy initial investment costs to deter smaller organizations to adopt InGaAs photodiodes adoption
Discover more about the InGaAs market with 80 figures and 68 data tables along with the table of contents. You will also find detailed market segmentation on https://www.factmr.com/report/4271/indium-gallium-arsenide-ingaas-market
Competitive Landscape
Prominent players associated with the manufacturing of InGaAs include Broadcom Inc., Hamamatsu Photonics K.K., USI Optoelectronics, II-VI Incorporated, First-sensor AG, RS Components & Controls (I) Ltd., Marktech Optoelectronics Inc., Sensors Unlimited Inc. and Laser Components GmbH. Key expansion strategies involve acquisition of regional manufacturers, vertical integration and offering diverse product lines to attract more customers.
In August 2019, Broadcom Inc. launched the LPD3040 40 GB/s InGaAs PIN Photodiode containing extra bandwidth designed to work in tandem with 40-Gbaud PAM-4 type signals. The semiconductor incorporates Broadcom DLH Technology to enable the die to function as a hermetic seal against GR-468-type environments. It also comes in the GP series, comprising a 2-inch gel pack.
Likewise, Hamamatsu Photonics manufactures linear and segmented InGaAs photodiode arrays. In the former category, there are four main product categories belonging to the spectral response range of 0.9 to 1.7 µm, with a peak sensitivity wavelength of 1.55 µm and photosensitivity of 0.95 A/W; while the latter offers two photodiodes with a photosensitive area of 2 mm and 1 mm respectively.
More Insights on Indium Gallium Arsenide (InGaAs) Market
Fact.MR, in its new offering, presents an unbiased analysis of the global Indium Gallium Arsenide (InGaAs) market, presenting historical demand data (2015-2019) and forecast statistics for the period of 2020-2030. The study delivers essential insights on the Indium Gallium Arsenide (InGaAs) market on the basis of product type (PN, PIN, schottky and avalanche), packaging (Ceramic, plastic. Metal and Others (Combination)) and application (Communication Systems, Consumer Electronics, AI + SI, Aerospace & Defense, Automotive and Others) across six major regions.
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