- Atomic layer deposition (ALD) GeAsSeTe Ovonic Threshold Switch (OTS) device advances applications of 3D Non-volatile memory (NVM) - Enables new innovations in Neuromorphic Computing, AI, Gaming and Data Centers
| SAN JOSE, Calif., June 16, 2020 /PRNewswire/ -- Intermolecular, Inc. (“Intermolecular”), the trusted partner for materials innovation and a wholly-owned subsidiary of Merck KGaA, Darmstadt, Germany, today announced the industry’s first quaternary atomic layer deposition (ALD) GeAsSeTe1 OTS device for 3D vertical memory arrays. This breakthrough combination of materials will enable a 3D vertical NVM memory architecture for customers to design chips for high density, high performance computing applications at affordable costs. “The Intermolecular team has deep expertise in testing, evaluating and discovering materials and innovating devices to solve leading edge customer problems,” said Casper van Oosten, Managing Director, Intermolecular. “Until now, building non-volatile memory in a high-density 3D architecture has been challenging because of the inability to stack tens of layers in a 3D structure, limiting memory density and consequently increasing the cost. This new material combination allows realization of these architectures, paving the way for neuromorphic computing, AI and other new semiconductor designs that are needed for faster and more affordable digital applications, from gaming to data centers.” Ovonic Threshold Switch (OTS) devices are commonly used as selector elements in 3D Crosspoint memory arrays. They were currently only limited to a crosspoint architecture due to the absence of conformality of physical vapor deposition (PVD) deposited chalcogenide films. The revolutionary four-element ALD discovery is the result of Intermolecular’s team of materials experts and the company’s depth of experience with precursors, chemistry process and deposition capabilities. The GeAsSeTe OTS device for 3D vertical memory arrays deliver excellent endurance at 1 billion cycles, fast switching and low threshold voltage (VTH) drift. The introduction and first demonstration of the As element in a 4 element ALD film allows for excellent thermal stability and for the device to operate at high temperatures. Moreover, ALD chalcogenides-based 3D vertical memories change the cost paradigm by making them less dependent on expensive lithography scaling and making them inherently bit cost scalable. It is expected that the future of phase change memories will be driven by the optimization and subsequent adoption of ALD based chalcogenides in high-volume manufacturing (HVM). About Intermolecular About Merck KGaA, Darmstadt, Germany The company holds the global rights to the name and trademark “Merck” internationally. The only exceptions are the United States and Canada, where the business sectors of Merck KGaA, Darmstadt, Germany operate as EMD Serono in healthcare, MilliporeSigma in life science, and EMD Performance Materials. Since its founding 1668, scientific exploration and responsible entrepreneurship have been key to the company’s technological and scientific advances. To this day, the founding family remains the majority owner of the publicly listed company. 1 GeAsSeTe= Germanium, Arsenic, Selenium, Tellurium Nicole.Conley@taniscomm.com
SOURCE Intermolecular |
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